[J-7-2] Study of Fluorine Incorporation in the Blocking Oxide of Metal-Alumina-Nitride-Oxide-Silicon-type Flash Memory Devices

M. Chang¹、J. Lee¹、Y. Ju¹、S. Jung¹、H. Choi¹、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

https://doi.org/10.7567/SSDM.2008.J-7-2