Hydrogen-and-Stress-Induced de-lamination in an IrO<sub>2</sub> Layer of FRAMs

J. H. Kim; D. J. Jung; H. H. Kim; Y. K. Hong; E. S. Lee; S. Y. Kim; J. Y. Jung; H. K. Koh; D. Y. Choi; S. K. Kang; H. Kim; W. W. Jung; J. Y. Kang; Y. M. Kang; S. Y. Lee; H. S. Jeong

doi:https://doi.org/10.7567/SSDM.2008.J-8-2

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-8-2] Hydrogen-and-Stress-Induced de-lamination in an IrO₂ Layer of FRAMs

J. H. Kim¹、D. J. Jung¹、H. H. Kim¹、Y. K. Hong¹、E. S. Lee¹、S. Y. Kim¹、J. Y. Jung¹、H. K. Koh¹、D. Y. Choi¹、S. K. Kang¹、H. Kim¹、W. W. Jung¹、J. Y. Kang¹、Y. M. Kang¹、S. Y. Lee¹、H. S. Jeong¹ (1.Samsung Electronics Co., Ltd., Korea)

https://doi.org/10.7567/SSDM.2008.J-8-2

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2008 International Conference on Solid State Devices and Materials

[J-8-2] Hydrogen-and-Stress-Induced de-lamination in an IrO2 Layer of FRAMs

[J-8-2] Hydrogen-and-Stress-Induced de-lamination in an IrO₂ Layer of FRAMs