Low-Voltage and Fast-Speed Forming Process of Tungsten Oxide Resistive Memory

K. P. Chang; W. C. Chien; Y. C. Chen; E. K. Lai; S. C. Tsai; S. H. Hsieh; Y. D. Yao; J. Gong; K. Y. Hsieh; R. Liu; C. Y. Lu

doi:https://doi.org/10.7567/SSDM.2008.J-9-4

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-9-4] Low-Voltage and Fast-Speed Forming Process of Tungsten Oxide Resistive Memory

K. P. Chang¹、W. C. Chien^1,2、Y. C. Chen¹、E. K. Lai^1,3、S. C. Tsai¹、S. H. Hsieh¹、Y. D. Yao²、J. Gong³、K. Y. Hsieh¹、R. Liu¹、C. Y. Lu¹ (1.Macronix International Co., Ltd.、2.National Chiao Tung Univ.、3.National Tsing Hua Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.J-9-4

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