Multi-Level Switching Characteristics for WO<sub>X</sub> Resistive RAM (RRAM)

W. C. Chien; K. P. Chang; Y. C. Chen; E. K. Lai; H. Mähne; Y. D. Yao; P. Lin; J. Gong; S. H. Hsieh; K. Y. Hsieh; R. Liu; C. Y. Lu

doi:https://doi.org/10.7567/SSDM.2008.J-9-5

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[J-9-5] Multi-Level Switching Characteristics for WO_X Resistive RAM (RRAM)

W. C. Chien^1,2、K. P. Chang¹、Y. C. Chen¹、E. K. Lai^1,3、H. Mähne¹、Y. D. Yao^2,4、P. Lin²、J. Gong³、S. H. Hsieh¹、K. Y. Hsieh¹、R. Liu¹、C. Y. Lu¹ (1.Macronix International Co., Ltd.、2.National Chiao Tung Univ.、3.National Tsing Hua Univ.、4.Tatung Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.J-9-5

▲

2008 International Conference on Solid State Devices and Materials

[J-9-5] Multi-Level Switching Characteristics for WOX Resistive RAM (RRAM)

[J-9-5] Multi-Level Switching Characteristics for WO_X Resistive RAM (RRAM)