The Japan Society of Applied Physics

[P-1-12] Trap-Related Carrier Transports in p-FET with Poly-Si/HfSiON Gate Stack

J. Chen1、T. Sekiguchi1、N. Fukata1、M. Takase1、T. Chikyo1、R. Hasunuma2、K. Yamabe2、M. Sato3、Y. Nara3、K. Yamada4 (1.NIMS、2.Univ. of Tsukuba、3.Selete、4.Waseda Univ., Japan)

https://doi.org/10.7567/SSDM.2008.P-1-12