[P-1-15] Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs

K. T. Lee¹、C. Y. Kang²、S. H. Hong¹、H. S. Choi¹、G. B. Choi¹、J. C. Kim¹、S. H. Song¹、R. H. Baek¹、M. S. Park¹、H. C. Sagong¹、S. H. Sakong³、S. W. Jung³、H. K. Park²、H. S. Hwang⁴、B. H. Lee²、Y. H. Jeong¹ (1.Pohang Univ. of Sci. and Tech., Korea、2.SEMATECH, USA、3.NCNT、4.GIST, Korea)

https://doi.org/10.7567/SSDM.2008.P-1-15