The Japan Society of Applied Physics

[P-1-15] Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs

K. T. Lee1、C. Y. Kang2、S. H. Hong1、H. S. Choi1、G. B. Choi1、J. C. Kim1、S. H. Song1、R. H. Baek1、M. S. Park1、H. C. Sagong1、S. H. Sakong3、S. W. Jung3、H. K. Park2、H. S. Hwang4、B. H. Lee2、Y. H. Jeong1 (1.Pohang Univ. of Sci. and Tech., Korea、2.SEMATECH, USA、3.NCNT、4.GIST, Korea)

https://doi.org/10.7567/SSDM.2008.P-1-15