New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO<sub>2</sub> nMOSFET

W. C. Wu; T. S. Chao; T. H. Chiu; C. S. Lai; J. C. Wang; M. W. Ma; W. C. Lo

doi:https://doi.org/10.7567/SSDM.2008.P-1-3

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-3] New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO₂ nMOSFET

W. C. Wu¹, T. S. Chao¹, T. H. Chiu¹, C. S. Lai², J. C. Wang³, M. W. Ma¹, W. C. Lo¹ (1.National Chiao Tung Univ., 2.Chang Gung Univ., 3.Nanya Tech. Corp., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-1-3

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2008 International Conference on Solid State Devices and Materials

[P-1-3] New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO2 nMOSFET

[P-1-3] New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO₂ nMOSFET