New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO<sub>2</sub> nMOSFET

W. C. Wu; T. S. Chao; T. H. Chiu; C. S. Lai; J. C. Wang; M. W. Ma; W. C. Lo

doi:https://doi.org/10.7567/SSDM.2008.P-1-3

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-3] New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO₂ nMOSFET

W. C. Wu¹、T. S. Chao¹、T. H. Chiu¹、C. S. Lai²、J. C. Wang³、M. W. Ma¹、W. C. Lo¹ (1.National Chiao Tung Univ.、2.Chang Gung Univ.、3.Nanya Tech. Corp., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-1-3

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2008 International Conference on Solid State Devices and Materials

[P-1-3] New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO2 nMOSFET

[P-1-3] New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO₂ nMOSFET