Interfacial and Electrical Characterization in MOSFETs with CeO<sub>2</sub> Gate Dielectric

F. C. Chiu; H. W. Chen; C. H. Chen; C. H. Liu; S. Y. Chen; B. S. Huang; H. S. Huang; H. L. Hwang

doi:https://doi.org/10.7567/SSDM.2008.P-1-8

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-1-8] Interfacial and Electrical Characterization in MOSFETs with CeO₂ Gate Dielectric

F. C. Chiu¹, H. W. Chen², C. H. Chen³, C. H. Liu¹, S. Y. Chen², B. S. Huang², H. S. Huang², H. L. Hwang³ (1.Ming Chuan Univ., 2.National Taipei Univ. of Tech., 3.National Tsing-Hua Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-1-8

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2008 International Conference on Solid State Devices and Materials

[P-1-8] Interfacial and Electrical Characterization in MOSFETs with CeO2 Gate Dielectric

[P-1-8] Interfacial and Electrical Characterization in MOSFETs with CeO₂ Gate Dielectric