Raman Spectroscopic Stress Analysis of Single Crystal Silicon (001) Specimen Tensioned Along the [100] Direction over 1000 MPa

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

M. Komatsubara¹、Y. Nagai¹、T. Namazu¹、N. Naka²、S. Kashiwagi²、K. Ohtsuki²、S. Inoue¹ (1.Univ. of Hyogo、2.HORIBA, Ltd., Japan)