[P-3-10] Impact of Ge Content on Flicker Noise Behavior in Strained-SiGe pMOSFETs

C. W. Kuo¹、S. L. Wu²、H. Y. Lin¹、S. H. Chen¹、C. Y. Wu²、C. H. Lin²、S. J. Chang¹ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-10