Impact of Ge Content on Flicker Noise Behavior in Strained-SiGe pMOSFETs

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

C. W. Kuo¹, S. L. Wu², H. Y. Lin¹, S. H. Chen¹, C. Y. Wu², C. H. Lin², S. J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., Taiwan)