The Japan Society of Applied Physics

[P-3-10] Impact of Ge Content on Flicker Noise Behavior in Strained-SiGe pMOSFETs

C. W. Kuo1, S. L. Wu2, H. Y. Lin1, S. H. Chen1, C. Y. Wu2, C. H. Lin2, S. J. Chang1 (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-10