The Japan Society of Applied Physics

[P-3-12] Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects

Y. Kobayashi1、K. Tsutsui1、K. Kakushima1、P. Ahmet1、V. R. Rao2、H. Iwai1 (1.Tokyo Tech., Japan、2.Indian Inst. of Tech. Bombay, India)

https://doi.org/10.7567/SSDM.2008.P-3-12