Modeling of Substrate Current of MOSFETs under Different Gate Biases and Temperatures

S. Y. Chen; C. H. Tu; M. C. Wang; S. H. Wu; Z. W. Jhou; C. J. Chang; J. Ko; H. S. Haung

doi:https://doi.org/10.7567/SSDM.2008.P-3-15

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-15] Modeling of Substrate Current of MOSFETs under Different Gate Biases and Temperatures

S. Y. Chen¹、C. H. Tu¹、M. C. Wang^1,2、S. H. Wu³、Z. W. Jhou³、C. J. Chang³、J. Ko³、H. S. Haung¹ (1.National Taipei Univ. of Tech.、2.Minghsin Univ. of Sci. and Tech.、3.UMC, Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-15

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