Modeling of Substrate Current of MOSFETs under Different Gate Biases and Temperatures

S. Y. Chen; C. H. Tu; M. C. Wang; S. H. Wu; Z. W. Jhou; C. J. Chang; J. Ko; H. S. Haung

doi:https://doi.org/10.7567/SSDM.2008.P-3-15

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-15] Modeling of Substrate Current of MOSFETs under Different Gate Biases and Temperatures

S. Y. Chen¹, C. H. Tu¹, M. C. Wang^1,2, S. H. Wu³, Z. W. Jhou³, C. J. Chang³, J. Ko³, H. S. Haung¹ (1.National Taipei Univ. of Tech., 2.Minghsin Univ. of Sci. and Tech., 3.UMC, Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-15

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