Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated using Top-down Technology

Y. K. Chin; K. L. Pey; N. Singh; G. Q. Lo; L. Chan; L. H. Tan; E. J. Tan

doi:https://doi.org/10.7567/SSDM.2008.P-3-17

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-17] Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated using Top-down Technology

Y. K. Chin^1,2,3、K. L. Pey¹、N. Singh²、G. Q. Lo²、L. Chan³、L. H. Tan²、E. J. Tan^1,2 (1.Nanyang Technological Univ.、2.Inst. of Microelectronics、3.Chartered Semiconductor Manufacturing Ltd., Singapore)

https://doi.org/10.7567/SSDM.2008.P-3-17

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