Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated using Top-down Technology

Y. K. Chin; K. L. Pey; N. Singh; G. Q. Lo; L. Chan; L. H. Tan; E. J. Tan

doi:https://doi.org/10.7567/SSDM.2008.P-3-17

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-17] Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated using Top-down Technology

Y. K. Chin^1,2,3, K. L. Pey¹, N. Singh², G. Q. Lo², L. Chan³, L. H. Tan², E. J. Tan^1,2 (1.Nanyang Technological Univ., 2.Inst. of Microelectronics, 3.Chartered Semiconductor Manufacturing Ltd., Singapore)

https://doi.org/10.7567/SSDM.2008.P-3-17

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