[P-3-18] Electrical and Structural Evaluations of Ultrathin SiGe- and Ge-on-insulator Fabricated using Ge Condensation by Dry Oxidation
H. Yang1, D. Wang1, H. Gao1, K. Hirayama1, K. Ikeda1, S. Hata1, H. Nakashima1
(1.Kyushu Univ., Japan)
https://doi.org/10.7567/SSDM.2008.P-3-18