[P-3-18] Electrical and Structural Evaluations of Ultrathin SiGe- and Ge-on-insulator Fabricated using Ge Condensation by Dry Oxidation
H. Yang1、D. Wang1、H. Gao1、K. Hirayama1、K. Ikeda1、S. Hata1、H. Nakashima1
(1.Kyushu Univ., Japan)
https://doi.org/10.7567/SSDM.2008.P-3-18