[P-3-19] Triple-gate FinFETs with Fin-thickness Optimization to Reduce the Impact of Fin Line Edge Roughness

S. Yu¹, Y. Zhao¹, G. Du¹, J. Kang¹, R. Han¹, X. Liu¹ (1.Peking Univ., China)

https://doi.org/10.7567/SSDM.2008.P-3-19