[P-3-19] Triple-gate FinFETs with Fin-thickness Optimization to Reduce the Impact of Fin Line Edge Roughness

S. Yu¹、Y. Zhao¹、G. Du¹、J. Kang¹、R. Han¹、X. Liu¹ (1.Peking Univ., China)

https://doi.org/10.7567/SSDM.2008.P-3-19