Effect of Hot-Carrier-Induced Hole Trapping on n-Type LDMOS Transistors

K. S. Tian; J. F. Chen; S. Y. Chen; J. R. Lee; K. M. Wu; C. M. Liu

doi:https://doi.org/10.7567/SSDM.2008.P-3-21

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-21] Effect of Hot-Carrier-Induced Hole Trapping on n-Type LDMOS Transistors

K. S. Tian¹, J. F. Chen¹, S. Y. Chen¹, J. R. Lee¹, K. M. Wu², C. M. Liu² (1.National Cheng Kung Univ., 2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-21

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