Effect of Hot-Carrier-Induced Hole Trapping on n-Type LDMOS Transistors

K. S. Tian; J. F. Chen; S. Y. Chen; J. R. Lee; K. M. Wu; C. M. Liu

doi:https://doi.org/10.7567/SSDM.2008.P-3-21

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-21] Effect of Hot-Carrier-Induced Hole Trapping on n-Type LDMOS Transistors

K. S. Tian¹、J. F. Chen¹、S. Y. Chen¹、J. R. Lee¹、K. M. Wu²、C. M. Liu² (1.National Cheng Kung Univ.、2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-21

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