Low-frequency Noise Characteristics of SiGe-channel PMOSFETs with High-compressive ILD-SiN<sub>x</sub> Stressing Layer

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

Y. T. Chen¹, K. M. Chen², W. S. Liao³, G. W. Huang², F. S. Yeh¹ (1.National Tsing Hua Univ., 2.National Nano Device Labs., 3.UMC, Taiwan)