Layout Dependence of SiGe Strain Effect and STI Induced Defects in 45nm p-PMOSFETs with Strain SiGe Source/Drain

C. Y. Cheng; Y. K. Fang; J. C. Hsieh; Y. M. Sheu; H. Hsia; W. M. Chen; S. S. Lin; C. S. Hou

doi:https://doi.org/10.7567/SSDM.2008.P-3-9

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-9] Layout Dependence of SiGe Strain Effect and STI Induced Defects in 45nm p-PMOSFETs with Strain SiGe Source/Drain

C. Y. Cheng¹、Y. K. Fang¹、J. C. Hsieh²、Y. M. Sheu²、H. Hsia²、W. M. Chen²、S. S. Lin²、C. S. Hou² (1.National Cheng Kung Univ.、2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-9

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