Layout Dependence of SiGe Strain Effect and STI Induced Defects in 45nm p-PMOSFETs with Strain SiGe Source/Drain

C. Y. Cheng; Y. K. Fang; J. C. Hsieh; Y. M. Sheu; H. Hsia; W. M. Chen; S. S. Lin; C. S. Hou

doi:https://doi.org/10.7567/SSDM.2008.P-3-9

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-9] Layout Dependence of SiGe Strain Effect and STI Induced Defects in 45nm p-PMOSFETs with Strain SiGe Source/Drain

C. Y. Cheng¹, Y. K. Fang¹, J. C. Hsieh², Y. M. Sheu², H. Hsia², W. M. Chen², S. S. Lin², C. S. Hou² (1.National Cheng Kung Univ., 2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-3-9

▲