A Dual-Gate Memory Cell with Two Inter-poly Oxides

J. R. Raguet; P. Calenzo; R. Laffont; D. Deleruyelle; R. Bouchakour; V. Bidal; A. Regnier; S. Niel; P. Fornara; J. M. Mirabel

doi:https://doi.org/10.7567/SSDM.2008.P-4-3

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-4-3] A Dual-Gate Memory Cell with Two Inter-poly Oxides

J. R. Raguet^1,2, P. Calenzo^1,2, R. Laffont¹, D. Deleruyelle¹, R. Bouchakour¹, V. Bidal², A. Regnier², S. Niel², P. Fornara², J. M. Mirabel² (1.Université Aix-Marseille 1, 2.STMicroelectronics, France)

https://doi.org/10.7567/SSDM.2008.P-4-3

▲