A Dual-Gate Memory Cell with Two Inter-poly Oxides

J. R. Raguet; P. Calenzo; R. Laffont; D. Deleruyelle; R. Bouchakour; V. Bidal; A. Regnier; S. Niel; P. Fornara; J. M. Mirabel

doi:https://doi.org/10.7567/SSDM.2008.P-4-3

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-4-3] A Dual-Gate Memory Cell with Two Inter-poly Oxides

J. R. Raguet^1,2、P. Calenzo^1,2、R. Laffont¹、D. Deleruyelle¹、R. Bouchakour¹、V. Bidal²、A. Regnier²、S. Niel²、P. Fornara²、J. M. Mirabel² (1.Université Aix-Marseille 1、2.STMicroelectronics, France)

https://doi.org/10.7567/SSDM.2008.P-4-3

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