Use of Current-Blocking Layer to Enhance Performance of Vertical GaN-Based Light-Emitting Diodes with a Ni-Plating Substrate

K. M. Uang; T. M. Chen; W. C. Lee; P. R. Wang; D. M. Kuo; Y. Y. Wang; S. J. Wang; H. Kuan

doi:https://doi.org/10.7567/SSDM.2008.P-7-13

2008 International Conference on Solid State Devices and Materials

Sep 23, 2008 - Sep 26, 2008
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-7-13] Use of Current-Blocking Layer to Enhance Performance of Vertical GaN-Based Light-Emitting Diodes with a Ni-Plating Substrate

K. M. Uang¹, T. M. Chen¹, W. C. Lee², P. R. Wang², D. M. Kuo², Y. Y. Wang², S. J. Wang², H. Kuan³ (1.WuFeng Inst. of Tech., 2.National Cheng Kung Univ., 3.Southern Taiwan Univ. of Tech., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-7-13

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