Use of Current-Blocking Layer to Enhance Performance of Vertical GaN-Based Light-Emitting Diodes with a Ni-Plating Substrate

K. M. Uang; T. M. Chen; W. C. Lee; P. R. Wang; D. M. Kuo; Y. Y. Wang; S. J. Wang; H. Kuan

doi:https://doi.org/10.7567/SSDM.2008.P-7-13

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-7-13] Use of Current-Blocking Layer to Enhance Performance of Vertical GaN-Based Light-Emitting Diodes with a Ni-Plating Substrate

K. M. Uang¹、T. M. Chen¹、W. C. Lee²、P. R. Wang²、D. M. Kuo²、Y. Y. Wang²、S. J. Wang²、H. Kuan³ (1.WuFeng Inst. of Tech.、2.National Cheng Kung Univ.、3.Southern Taiwan Univ. of Tech., Taiwan)

https://doi.org/10.7567/SSDM.2008.P-7-13

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