[H-3-4] Optical Identification and Electrical Characterization of Graphene Transferred from Natural Graphite on Thinner (90nm-thick) SiO₂

K. Nagashio¹, T. Nishimura¹, K. Kita¹, A. Toriumi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-3-5] Carbon based Superconducting Nanostructures for Molecular Spintronics Applications (Invited)

V. Bouchiat^1,2, J. P. Cleuziou^1,2, W. Wernsdorfer¹, T. Ondarcuhu³, M. Monthioux³, C. Girit², O. Naaman², Y. Zhang², M. Crommie², A. Zettl², J. Clarke², I. Siddiqi² (1.Institut Néel, France, 2.Univ. of California, Berkeley, USA, 3.CEMES-Toulouse, France)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-5-1] Device and Technology Platform with Silicon Nanowire (Invited)

G. Q. Lo¹, N. Singh¹, S. C. Rustagi¹, K. D. Buddharaju¹, N. Balasubramanian¹, D. L. Kwong¹ (1.Inst. of Microelectronics, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-5-2] Impact of Quantum Effect on Diffusion Layer Resistance of Si Nanowire MOSFETs

D. Hagishima¹, K. Matsuzawa¹, S. Odanaka² (1.Toshiba Corp., 2.Osaka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-5-3] Impacts of Cross Section Shape and Dimension on Electron Effective Mass in Silicon Nanowires

D. Yao^1,2, G. Zhang², G. Q. Lo², B. Li¹ (1.National Univ. of Singapore, 2.Inst. of Microelectronics, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-5-4] Uniaxially Strained SiGe/Si Core/Shell Nanowire pFETs Integrated on Bulk Si with Ni_xSi_yGe_1-x-y Source and Drain Contacts

Y. Jiang^1,2, N. Singh¹, T. Y. Liow¹, P. C. Lim³, S. Tripathy³, S. A. Oh³, G. Q. Lo¹, D. S. H. Chan², D. L. Kwong¹ (1.Inst. of Microelectronics, 2.National Univ. of Singapore, 3.Inst. of Materials Res. and Eng., Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-6-1] Tunable Few Electron Double Dots in InAs Nanowires (Invited)

I. Shorubalko¹, A. Pfund¹, S. Gustavsson¹, T. Choi¹, R. Leturcq^1,2, K. Ensslin¹ (1.ETH Zürich, Switzerland, 2.IEMN-CNRS UMR 8520, France)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-6-2] One-dimensional and Two-dimensional Spectral Diffusion in InP/InAs/InP Core-Multishell Nanowires

K. Goto¹, M. Ikezawa¹, S. Tomimoto¹, B. Pal¹, Y. Masumoto¹, P. Mohan², J. Motohisa², T. Fukui² (1.Univ. of Tsukuba, 2.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-6-3] Effect of Growth Condition on Well-Arranged InGaN/GaN Nanocolumns Grown by Selective Area Growth (SAG) of rf-Plasma-Assisted Molecular-Beam Epitaxy

H. Sekiguchi^1,2, K. Kishino^1,2, A. Kikuchi^1,2 (1.Sophia Univ., 2.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-6-4] Spectroscopy and Imaging of GaAs/InGaAs/GaAs Nanowires Grown by Selective-area Metalorganic Vapor Phase Epitaxy

J. Motohisa¹, M. Fukui¹, Y. Kobayashi¹, T. Fukui¹ (1.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

587 results (301 - 310)

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