Counter-doping as a solution for multi threshold voltage on FDSOI MOSFETs with a single TiN/HfO<sub>2</sub> gate stack

C. Buj-Dufournet; F. Andrieu; O. Faynot; O. Weber; F. Allain; L. Tosti; C. Fenouillet-Béranger; D. Lafond; S. Deleonibus

doi:https://doi.org/10.7567/SSDM.2009.A-1-3

[A-1-3] Counter-doping as a solution for multi threshold voltage on FDSOI MOSFETs with a single TiN/HfO₂ gate stack

C. Buj-Dufournet¹, F. Andrieu¹, O. Faynot¹, O. Weber¹, F. Allain¹, L. Tosti¹, C. Fenouillet-Béranger¹, D. Lafond¹, S. Deleonibus¹ (1.CEA-LETI/MINATEC)

https://doi.org/10.7567/SSDM.2009.A-1-3

2009 International Conference on Solid State Devices and Materials

[A-1-3] Counter-doping as a solution for multi threshold voltage on FDSOI MOSFETs with a single TiN/HfO2 gate stack

[A-1-3] Counter-doping as a solution for multi threshold voltage on FDSOI MOSFETs with a single TiN/HfO₂ gate stack