[A-1-3] Counter-doping as a solution for multi threshold voltage on FDSOI MOSFETs with a single TiN/HfO₂ gate stack

C. Buj-Dufournet¹、F. Andrieu¹、O. Faynot¹、O. Weber¹、F. Allain¹、L. Tosti¹、C. Fenouillet-Béranger¹、D. Lafond¹、S. Deleonibus¹ (1.CEA-LETI/MINATEC)

https://doi.org/10.7567/SSDM.2009.A-1-3