[A-1-4] High Performance (110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique

S. Dissanayake¹, S. Sugahara², M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo(Japan), 2.Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2009.A-1-4