[A-1-4] High Performance (110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique

S. Dissanayake¹、S. Sugahara²、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo(Japan)、2.Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2009.A-1-4