Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect Transistors

S. M. Koh; C. M. Ng; Z. Y. Zhao; H. Maynard; N. Variam; T. Henry; Y. Erokhin; G. Samudra; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2009.A-1-6

[A-1-6] Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect Transistors

S. M. Koh¹, C. M. Ng², Z. Y. Zhao³, H. Maynard³, N. Variam³, T. Henry³, Y. Erokhin³, G. Samudra¹, Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore), 2.Chartered Semiconductor Manufacturing Ltd.(Singapore), 3.Varian Semiconductor(USA))

https://doi.org/10.7567/SSDM.2009.A-1-6

2009 International Conference on Solid State Devices and Materials

[A-1-6] Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect Transistors