[A-1-6] Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect Transistors

S. M. Koh¹、C. M. Ng²、Z. Y. Zhao³、H. Maynard³、N. Variam³、T. Henry³、Y. Erokhin³、G. Samudra¹、Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore)、2.Chartered Semiconductor Manufacturing Ltd.(Singapore)、3.Varian Semiconductor(USA))

https://doi.org/10.7567/SSDM.2009.A-1-6