[A-2-2] Temperature Coefficient of Threshold Voltage in Metal/High-k Gate Transistors with Various Thickness of TiN and Capping Layers

Y. Nishida^1,2、K. Eikyu¹、A. Shimizu¹、T. Yamashita¹、H. Oda¹、Y. Inoue¹、K. Shibahara² (1.Renesas Tech. Corp.(Japan)、2.Hiroshima Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.A-2-2