[A-2-6] Experimental Study on I_g RTS Noise of SiON/HfO₂/TaN PMOSFETs

L. Zhang¹、R. Wang¹、J. Zhuge¹、R. Huang¹、T. Yu¹、P. Kirsch²、H. H. Tseng²、Y. Wang¹ (1.Peking Univ.(China)、2.SEMATECH(USA))

https://doi.org/10.7567/SSDM.2009.A-2-6