Stress variability control by defects suppression of SiGe Source/Drain using novel SiGe epitaxial growth technique

M. Fukuda; Y. Shimamune; M. Nakamura; K. Tanahashi; T. Miyashita; M. Nishikawa; N. Tamura; T. Mori; Y. Nara; M. Kase

doi:https://doi.org/10.7567/SSDM.2009.A-3-5L

[A-3-5L] Stress variability control by defects suppression of SiGe Source/Drain using novel SiGe epitaxial growth technique

M. Fukuda¹, Y. Shimamune¹, M. Nakamura¹, K. Tanahashi¹, T. Miyashita¹, M. Nishikawa¹, N. Tamura¹, T. Mori¹, Y. Nara¹, M. Kase¹ (1.Fujitsu Microelectronics Ltd.)

https://doi.org/10.7567/SSDM.2009.A-3-5L

2009 International Conference on Solid State Devices and Materials

[A-3-5L] Stress variability control by defects suppression of SiGe Source/Drain using novel SiGe epitaxial growth technique