Multiple-Gate Tunneling Field Effect Transistors with sub-60mV/dec Subthreshold Slope

D. Leonelli; A. Vandooren; R. Rooyackers; A. S. Verhulst; S. De Gendt; M. M. Heyns; G. Groeseneken

doi:https://doi.org/10.7567/SSDM.2009.A-4-1

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜 2009年10月9日
Sendai Kokusai Hotel, Miyagi, Japan

[A-4-1] Multiple-Gate Tunneling Field Effect Transistors with sub-60mV/dec Subthreshold Slope

D. Leonelli^1,2、A. Vandooren¹、R. Rooyackers¹、A. S. Verhulst^1,2、S. De Gendt^1,2、M. M. Heyns^1,2、G. Groeseneken^1,2 (1.IMEC(Belgium)、2.Katholieke Univ. Leuven(Belgium))

https://doi.org/10.7567/SSDM.2009.A-4-1

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