[B-2-1] Thermally stable Ni-silicide gate electrode with TiN barrier metal for NAND flash memory application with 24 nm technology and beyond

S. J. Whang¹、M. S. Joo¹、B. M. Seo¹、K. E. Chang¹、W. K. Kim¹、T. W. Jung¹、G. H. Kim¹、J. Y. Lim¹、K. Y. Kim¹、K. Hong¹、S. K. Park¹ (1.Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2009.B-2-1