[B-2-2] Lanthanoid Metal Oxide MIM Capacitors for Precision Analog Circuits: Material Screening, Process Development, and Characterization

J. D. Chen¹、J. J. Yang¹、R. Wise²、P. Steinmann²、C. Zhu¹、Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore)、2.Texas Instruments Inc.(USA))

https://doi.org/10.7567/SSDM.2009.B-2-2