[B-2-3] Oxygen-Terminated Si Surface for Atomic Layer Deposition and its Impact on Interfacial Electrical Quality of sub-nm-EOT high-k Gate Stacks

Y. Morita¹、S. Migita¹、N. Taoka¹、W. Mizubayashi¹、H. Ota¹ (1.MIRAI-AIST)

https://doi.org/10.7567/SSDM.2009.B-2-3