[B-2-3] Oxygen-Terminated Si Surface for Atomic Layer Deposition and its Impact on Interfacial Electrical Quality of sub-nm-EOT high-k Gate Stacks

Y. Morita¹, S. Migita¹, N. Taoka¹, W. Mizubayashi¹, H. Ota¹ (1.MIRAI-AIST)

https://doi.org/10.7567/SSDM.2009.B-2-3