[B-2-5L] Polarized Raman study of mechanical stress distribution in W/TiN metal gate MOSFETs

T. Tada¹、V. Poborchii¹、T. Matsuki²、J. Yugami²、T. Kanayama¹ (1.MIRAI-AIST(Japan)、2.Selete(Japan))

https://doi.org/10.7567/SSDM.2009.B-2-5L