Gate Leakage Advantage of LaO Incorporation for V<sub>t</sub> Tuning in High-k nMOSFETs over Metal Gate WF Control

M. Kadoshima; S. Sakashita; T. Kawahara; M. Inoue; M. Mizutani; Y. Nishida; A. Shimizu; Y. Takeshima; S. Yamanari; M. Anma; R. Mitsuhashi; Y. Satoh; S. Matsuyama; A. Tsudumitani; Y. Okuno; H. Umeda; J. Yugami; H. Yoshimura; H. Miyatake

doi:https://doi.org/10.7567/SSDM.2009.B-4-2

[B-4-2] Gate Leakage Advantage of LaO Incorporation for V_t Tuning in High-k nMOSFETs over Metal Gate WF Control

M. Kadoshima¹, S. Sakashita¹, T. Kawahara¹, M. Inoue¹, M. Mizutani¹, Y. Nishida¹, A. Shimizu¹, Y. Takeshima¹, S. Yamanari¹, M. Anma¹, R. Mitsuhashi², Y. Satoh², S. Matsuyama², A. Tsudumitani², Y. Okuno², H. Umeda¹, J. Yugami¹, H. Yoshimura¹, H. Miyatake¹ (1.Renesas Tech. Corp.(Japan), 2.Panasonic Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.B-4-2

2009 International Conference on Solid State Devices and Materials

[B-4-2] Gate Leakage Advantage of LaO Incorporation for Vt Tuning in High-k nMOSFETs over Metal Gate WF Control

[B-4-2] Gate Leakage Advantage of LaO Incorporation for V_t Tuning in High-k nMOSFETs over Metal Gate WF Control