The Japan Society of Applied Physics

[B-4-2] Gate Leakage Advantage of LaO Incorporation for Vt Tuning in High-k nMOSFETs over Metal Gate WF Control

M. Kadoshima1、S. Sakashita1、T. Kawahara1、M. Inoue1、M. Mizutani1、Y. Nishida1、A. Shimizu1、Y. Takeshima1、S. Yamanari1、M. Anma1、R. Mitsuhashi2、Y. Satoh2、S. Matsuyama2、A. Tsudumitani2、Y. Okuno2、H. Umeda1、J. Yugami1、H. Yoshimura1、H. Miyatake1 (1.Renesas Tech. Corp.(Japan)、2.Panasonic Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.B-4-2