Gate Leakage Advantage of LaO Incorporation for V<sub>t</sub> Tuning in High-k nMOSFETs over Metal Gate WF Control

M. Kadoshima; S. Sakashita; T. Kawahara; M. Inoue; M. Mizutani; Y. Nishida; A. Shimizu; Y. Takeshima; S. Yamanari; M. Anma; R. Mitsuhashi; Y. Satoh; S. Matsuyama; A. Tsudumitani; Y. Okuno; H. Umeda; J. Yugami; H. Yoshimura; H. Miyatake

doi:https://doi.org/10.7567/SSDM.2009.B-4-2

[B-4-2] Gate Leakage Advantage of LaO Incorporation for V_t Tuning in High-k nMOSFETs over Metal Gate WF Control

M. Kadoshima¹、S. Sakashita¹、T. Kawahara¹、M. Inoue¹、M. Mizutani¹、Y. Nishida¹、A. Shimizu¹、Y. Takeshima¹、S. Yamanari¹、M. Anma¹、R. Mitsuhashi²、Y. Satoh²、S. Matsuyama²、A. Tsudumitani²、Y. Okuno²、H. Umeda¹、J. Yugami¹、H. Yoshimura¹、H. Miyatake¹ (1.Renesas Tech. Corp.(Japan)、2.Panasonic Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.B-4-2

2009 International Conference on Solid State Devices and Materials

[B-4-2] Gate Leakage Advantage of LaO Incorporation for Vt Tuning in High-k nMOSFETs over Metal Gate WF Control

[B-4-2] Gate Leakage Advantage of LaO Incorporation for V_t Tuning in High-k nMOSFETs over Metal Gate WF Control